Datasheet NTE219 - NTE Electronics POWER TRANSISTOR, PNP, -60 V, TO-3 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: POWER TRANSISTOR, PNP, -60 V, TO-3

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Docket:
NTE130 (NPN) & NTE219 (PNP) Silicon Power Transistor Audio Power Amp, Medium Speed Switch
Description: The NTE130 (NPN) and NTE219 (PNP) are silicon complementary transistors in a TO3 type case designed for general purpose switching and amplifier applications.

Features: D DC Current Gain: hFE = 20 ­ 70 @ IC = 4A D Collector­Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector­Emitter Voltage, VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• DC Collector Current: 15 A
• DC Current Gain Max (hfe): 70
• Power Dissipation Pd: 115 W
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 2.5 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 403K