Datasheet NTE2319 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 450 V, TO-3 — 数据表

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Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 450 V, TO-3

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NTE2319 Silicon NPN Transistor High Voltage, High Speed Power Switch
Description: The NTE2319 is a silicon NPN transistor in a TO3 type package designed for high voltage, high speed, power switching in inductive circuits where fall time is critical.

It is particularly suited for line­operated switchmode applications. Features: D Fast Turn­On Times @ TC = +100°C: Inductive Fall Time: 50ns Typ Inductive Crossover Time: 90ns Typ Inductive Storage Time: 800ns Typ D 100°C Performance Specified for: Reverse­Biased SOA with Inductive Loads Switching Times with Inductive Loads Saturation Voltages Leakage Current Applications: D Switching Regulators D Inverters D Solenoids D Relay Drivers D Motor Controls D Deflection Circuits Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Collector­Emitter Voltage, VCEV . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 450 V
• DC Collector Current: 15 A
• DC Current Gain Max (hfe): 5
• Operating Temperature Range: -65°C to +200°C
• Power Dissipation Pd: 175 W
• Transistor Polarity: NPN

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 403K