Datasheet NTE2350 - NTE Electronics DARLINGTON TRANSISTOR, PNP, -120 V, TO-3 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: DARLINGTON TRANSISTOR, PNP, -120 V, TO-3

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Docket:
NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose
Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.

Features: D High DC Current Gain:
hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A D Diode Protection to Rated IC D Monolithic Construction w/Built­In Base­Emitter Shunt Resistor D Junction Temperature to +200°C Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous

Specifications:

• Collector Emitter Voltage V(br)ceo: -120 V
• DC Collector Current: -50 A
• DC Current Gain Max (hfe): 1000
• Power Dissipation Pd: 300 W
• Transistor Polarity: PNP

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 403K