Datasheet NTE249 - NTE Electronics BIPOLAR TRANSISTOR, NPN, 100 V, TO-3 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, NPN, 100 V, TO-3

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Docket:
NTE249 (NPN) & NTE250 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for use as output devices in complementary general purpose amplifier applications.

Features: D High DC Current Gain: hFE = 3500 Typ @ IC = 10A D Monolithic Construction with Built­In Base­Emitter Shunt Resistors Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 10 A
• DC Current Gain Max (hfe): 1000
• Operating Temperature Range: -55°C to +200°C
• Power Dissipation Pd: 150 W
• Transistor Polarity: NPN

RoHS: Yes