Datasheet NTE251 - NTE Electronics DARLINGTON TRANSISTOR, NPN, 100 V, TO-3 — 数据表

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Manufacturer: NTE Electronics

Description: DARLINGTON TRANSISTOR, NPN, 100 V, TO-3

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Docket:
NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general­purpose amplifier and low­frequency switching applications.

Features: D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector­Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built­In Base­Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 20 A
• DC Current Gain Max (hfe): 18000
• Power Dissipation Pd: 160 W
• Transistor Polarity: NPN

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 403K