Datasheet NTE261 - NTE Electronics DARLINGTON TRANSISTOR, NPN, 100 V, TO-220 — 数据表

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Manufacturer: NTE Electronics

Description: DARLINGTON TRANSISTOR, NPN, 100 V, TO-220

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Docket:
NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier
Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low­speed switching applications.

Features: D High DC Current Gain: hFE = 2500 Typ @ IC = 4A D Collector­Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA D Low Collector­Emitter Saturation Voltage: VCE(sat) = 2V Max @ IC = 3A = 4V Max @ IC = 5A D Monolithic Construction with Built­In Base­Emitter Shunt Resistor Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector­Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Emitter­Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 5 A
• DC Current Gain Max (hfe): 2500
• Power Dissipation Pd: 65 W
• Transistor Polarity: NPN

RoHS: Yes