Datasheet NTE55 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -150 V, TO-220 — 数据表

详细说明

Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -150 V, TO-220

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Docket:
NTE54 (NPN) & NTE55 (PNP) Silicon Complementary Transistors High Frequency Driver for Audio Amplifier
Description: The NTE54 (NPN) and NTE55 (PNP) are silicon complementary transistors in a TO220 type case designed for use as a high frequency driver in audio amplifier applications.

Features: D DC Current Gain Specified to 4A: hFE = 40 Min @ IC = 3A = 20 MIn @ IC = 4A D Collector­Emitter Sustaining Voltage: VCEO(sus) = 150V Min D High Current Gain­Bandwidth Product: fT = 30MHz Min @ IC = 500mA Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V Emitter­Base Voltage, VEB) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -150 V
• DC Collector Current: -8 A
• DC Current Gain Max (hfe): 40
• Power Dissipation Pd: 50 W
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 30 MHz

RoHS: Yes

Accessories:

• WAKEFIELD SOLUTIONS - 273-AB