Datasheet NTE61 - NTE Electronics BIPOLAR TRANSISTOR, PNP, -140 V TO-3 — 数据表

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Manufacturer: NTE Electronics

Description: BIPOLAR TRANSISTOR, PNP, -140 V TO-3

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Docket:
NTE60 (NPN) & NTE61 (PNP) Silicon Complementary Transistors High Power Audio, Disk Head Positioner for Linear Applications
Description: The NTE60 (NPN) and NTE61 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications.

Features: D High Safe Operating Area: 250W @ 50V D For Low Distortion Complementary Designs D High DC Current Gain: hFE = 25 Min @ IC = 5A Absolute Maximum Ratings: Collector­Emitter Voltage, VCEO(sus) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Collector­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140V Emitter­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: -140 V
• DC Collector Current: 17 A
• DC Current Gain Max (hfe): 25
• Power Dissipation Pd: 200 W
• Transistor Polarity: PNP
• Transition Frequency Typ ft: 2 MHz

RoHS: Yes