Datasheet NTE291 - NTE Electronics Small Signal Bipolar Transistor — 数据表

详细说明

Manufacturer: NTE Electronics

Description: Small Signal Bipolar Transistor

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Docket:
NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General­Purpose Medium­Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications.

They are especially designed for series and shunt regulators and as a driver and output stage of high­fidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: Collector­to­Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector­to­Emitter Voltage (RBB = 100, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V Collector­to­Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V Emitter­To­Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Specifications:

• Collector Emitter Voltage V(br)ceo: 130 V
• DC Collector Current: 4 A
• DC Current Gain Min: 2
• DC Current Gain: 150
• Gain Bandwidth ft Typ: 4 MHz
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 1.8 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-220
• Transistor Polarity: NPN

RoHS: Yes