Datasheet PBSS303ND - NXP TRANSISTOR, NPN, 60 V, 3 A, SSOT-6 — 数据表

详细说明

Manufacturer: NXP

Description: TRANSISTOR, NPN, 60 V, 3 A, SSOT-6

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Docket:
PBSS303ND
60 V, 3 A NPN low VCEsat (BISS) transistor
Rev.

02 -- 14 December 2007 Product data sheet
1. Product profile
1.1 General description

Simulation Model

Specifications:

• Collector Emitter Voltage V(br)ceo: 60 V
• Collector Emitter Voltage Vces: 515 mV
• Current Ic @ Vce Sat: 6 A
• Current Ic Continuous a Max: 3 A
• DC Current Gain Min: 345
• DC Current Gain: 500 mA
• Gain Bandwidth ft Typ: 140 MHz
• Mounting Type: SMD
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SSOT-6
• Power Dissipation Pd: 1.1 W
• Power Dissipation Ptot Max: 1.1 W
• SVHC: No SVHC (18-Jun-2010)
• Transistor Case Style: SSOT
• Transistor Polarity: NPN
• Transistor Type: General Purpose

RoHS: Yes