Datasheet PDTB123ET - NXP — 数据表

详细说明

Manufacturer: NXP

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Specifications:

• Collector Emitter Voltage V(br)ceo: 50 V
• Collector Emitter Voltage Vces: 300 mV
• Continuous Collector Current Ic Max: 500 mA
• Current Ic Continuous a Max: 50 mA
• DC Collector Current: 50 mA
• DC Current Gain Min: 40
• DC Current Gain: 40
• Mounting Type: SMD
• Number of Pins: 3
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-23
• Power Dissipation: 250 mW
• Resistance R1: 2.2 kOhm
• Resistance R2: 2.2 kOhm
• SVHC: No SVHC (19-Dec-2011)
• Transistor Case Style: SOT-23
• Transistor Polarity: PNP

RoHS: Yes