Datasheet PDTB113ET - NXP TRANSISTOR, PNP, 50 V, 0.5 A, SOT-23 — 数据表

NXP PDTB113ET

Part Number: PDTB113ET

详细说明

Manufacturer: NXP

Description: TRANSISTOR, PNP, 50 V, 0.5 A, SOT-23

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 50 V
  • Collector Emitter Voltage Vces: -300 mV
  • Continuous Collector Current Ic Max: 500 mA
  • Current Ic Continuous a Max: -50 mA
  • DC Current Gain Min: 33
  • Mounting Type: SMD
  • Operating Temperature Range: -65°C to +150°C
  • Package / Case: SOT-23 (TO-236)
  • Power Dissipation Pd: 250 mW
  • Resistance R1: 1 kOhm
  • Resistance R2: 1 kOhm
  • SVHC: No SVHC (18-Jun-2010)
  • Transistor Case Style: SOT-23
  • Transistor Polarity: PNP
  • Transistor Type: General Purpose

RoHS: Yes

Accessories:

  • Roth Elektronik - RE901