Datasheet 2N5302G - ON Semiconductor TRANSISTOR, NPN, TO-3 — 数据表

ON Semiconductor 2N5302G

Part Number: 2N5302G

详细说明

Manufacturer: ON Semiconductor

Description: TRANSISTOR, NPN, TO-3

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Docket:
2N5302 High-Power NPN Silicon Transistor
High-power NPN silicon transistors are for use in power amplifier and switching circuits applications.
Features http://onsemi.com
· Low Collector-Emitter Saturation Voltage - ·
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available*

Simulation ModelSimulation Model

Specifications:

  • Collector Emitter Voltage V(br)ceo: 60 V
  • Collector Emitter Voltage Vces: 750 mV
  • Current Ic Continuous a Max: 30 A
  • DC Collector Current: 30 A
  • DC Current Gain Min: 5
  • DC Current Gain: 60 mA
  • Gain Bandwidth ft Typ: 2 MHz
  • Mounting Type: Through Hole
  • Number of Pins: 2
  • Package / Case: TO-204AA
  • Power Dissipation Pd: 200 W
  • SVHC: No SVHC (15-Dec-2010)
  • Transistor Case Style: TO-204AA
  • Transistor Polarity: NPN

RoHS: Yes