Datasheet 2N5302G - ON Semiconductor TRANSISTOR, NPN, TO-3 — 数据表
Part Number: 2N5302G
详细说明
Manufacturer: ON Semiconductor
Description: TRANSISTOR, NPN, TO-3
Docket:
2N5302 High-Power NPN Silicon Transistor
High-power NPN silicon transistors are for use in power amplifier and switching circuits applications.
Features http://onsemi.com
· Low Collector-Emitter Saturation Voltage - ·
VCE(sat) = 0.75 Vdc (Max) @ IC = 10 Adc Pb-Free Package is Available*
Specifications:
- Collector Emitter Voltage V(br)ceo: 60 V
- Collector Emitter Voltage Vces: 750 mV
- Current Ic Continuous a Max: 30 A
- DC Collector Current: 30 A
- DC Current Gain Min: 5
- DC Current Gain: 60 mA
- Gain Bandwidth ft Typ: 2 MHz
- Mounting Type: Through Hole
- Number of Pins: 2
- Package / Case: TO-204AA
- Power Dissipation Pd: 200 W
- SVHC: No SVHC (15-Dec-2010)
- Transistor Case Style: TO-204AA
- Transistor Polarity: NPN
RoHS: Yes