Datasheet MJD112-1G - ON Semiconductor DARLINGTON TRANSISTOR, NPN, 100 V, D-PAK — 数据表

详细说明

Manufacturer: ON Semiconductor

Description: DARLINGTON TRANSISTOR, NPN, 100 V, D-PAK

Specifications:

• Collector Emitter Voltage V(br)ceo: 100 V
• DC Collector Current: 2 A
• DC Current Gain Max (hfe): 12
• Power Dissipation Pd: 20 W
• Transistor Polarity: N Channel
• Transition Frequency Typ ft: 25 MHz

RoHS: Yes

其他名称:

MJD1121G, MJD112 1G