DATA SHEET
www.onsemi.com Darlington Complementary
Silicon Power Transistors
BDX33B, BDX33C (NPN)
BDX34B, BDX34C (PNP) DARLINGTON
10 AMPERE
COMPLEMENTARY SILICON
POWER TRANSISTORS
80−100 VOLTS, 65 WATTS These devices are designed for general purpose and low speed
switching applications.
Features • High DC Current Gain − hFE = 2500 (typ.) at IC = 4.0
• Collector−Emitter Sustaining Voltage at 100 mAdc
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• VCEO(sus) = 80 Vdc (min) − BDX33B, BDX334B
= 100 Vdc (min) − BDX33C, BDX334C
Low Collector−Emitter Saturation Voltage
VCE(sat) = 2.5 Vdc (max) at IC = 3.0 Adc
− BDX33B, 33C/34B, 34C
Monolithic Construction with Build−In Base−Emitter Shunt Resistors
These Devices are Pb−Free and are RoHS Compliant* Rating Symbol
VCEO Collector−Base Voltage
BDX33B, BDX34B …