Datasheet MJE350G - ON Semiconductor TRANSISTOR, PNP, TO-126 — 数据表

ON Semiconductor MJE350G

Part Number: MJE350G

详细说明

Manufacturer: ON Semiconductor

Description: TRANSISTOR, PNP, TO-126

Docket:
MJE350 Plastic Medium Power PNP Silicon Transistor
This device is designed for use in line-operated applications such as low power, line-operated series pass and switching regulators requiring PNP capability.
Features http://onsemi.com
· High Collector-Emitter Sustaining Voltage - · · ·
VCEO(sus) = 300 Vdc @ IC = 1.0 mAdc Excellent DC Current Gain - hFE = 30-240 @ IC = 50 mAdc Plastic Thermopad Package Pb-Free Package is Available*

Simulation Model

Specifications:

Collector Emitter Voltage V(br)ceo: 300 V
Collector Emitter Voltage Vces: 30 V
Continuous Collector Current Ic Max: 500 mA
Current Ic Continuous a Max: 500 mA
DC Collector Current: 500 mA
DC Current Gain Min: 30
DC Current Gain: 50 mA
Full Power Rating Temperature: 25°C
Mounting Type: Through Hole
Number of Pins: 3
Number of Transistors: 1
Package / Case: TO-126
Power Dissipation Pd: 20 W
Power Dissipation Ptot Max: 20 W
SVHC: No SVHC (15-Dec-2010)
Transistor Case Style: TO-126
Transistor Polarity: PNP
Voltage Vcbo: 300 V DC

RoHS: Yes

Accessories:

Fischer Elektronik - FK 213 SA-32
Fischer Elektronik - UK 35 SA-32
Fischer Elektronik - WLK 5