Datasheet ON Semiconductor MJ2955G — 数据表

2N3055(NPN), MJ2955(PNP)
Preferred Device Complementary Silicon
Power Transistors
Complementary silicon power transistors are designed for
general−purpose switching and amplifier applications.
Features http://onsemi.com • DC Current Gain − hFE = 20−70 @ IC = 4 Adc
• Collector−Emitter Saturation Voltage −
•
• 15 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
60 VOLTS, 115 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
Excellent Safe Operating Area
Pb−Free Packages are Available* MAXIMUM RATINGS
Symbol Value Unit Collector−Emitter Voltage Rating VCEO 60 Vdc Collector−Emitter Voltage VCER 70 Vdc Collector−Base Voltage VCB 100 Vdc Emitter−Base Voltage VEB 7 Vdc IC 15 Adc Collector Current − Continuous
Base Current IB 7 Adc Total Power Dissipation @ TC = 25°C
Derate Above 25°C PD 115
0.657 W
W/°C TJ, Tstg − 65 to +200 °C Operating and Storage Junction
Temperature Range TO−204AA (TO−3)
CASE 1−07
STYLE 1 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not …