Datasheet 2STW4466 - STMicroelectronics TRANSISTOR, NPN TO-247 — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: TRANSISTOR, NPN TO-247

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Docket:
2STW4466
High power NPN epitaxial planar bipolar transistor
Features
High breakdown voltage VCEO = 80 V Complementary to 2STW1693 Typical ft = 20 MHz Fully characterized at 125 oC
Applications

Specifications:

• Collector Emitter Voltage V(br)ceo: 80 V
• Collector Emitter Voltage Vces: 600 mV
• Continuous Collector Current Ic Max: 6 A
• Current Ic Continuous a Max: 6 A
• DC Collector Current: 6 A
• DC Current Gain Min: 50
• DC Current Gain: 2 A
• Gain Bandwidth ft Typ: 20 MHz
• Mounting Type: Through Hole
• Number of Pins: 3
• Package / Case: TO-247
• Power Dissipation Pd: 60 W
• Power Dissipation Ptot Max: 60 W
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: TO-247
• Transistor Polarity: NPN
• Voltage Vcbo: 100 V

RoHS: Yes

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