Datasheet STMicroelectronics D45H8 — 数据表

D44H8 -D44H11
D45H8 -D45H11
Complementary power transistors
Features . ■ Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications
■ Power amplifier ■ Switching circuits 3
1 TO-220 Description
The devices are manufactured in low voltage multi
epitaxial planar technology. They are intended for
general purpose linear and switching applications. Table 1. 2 Figure 1. Internal schematic diagram Device summary Order codes Marking Polarity Package Packaging D44H8 D44H8 NPN TO-220 Tube D44H11 D44H11 NPN TO-220 Tube D45H8 D45H8 PNP TO-220 Tube D45H11 D45H11 PNP TO-220 Tube October 2009 Doc ID 4213 Rev 5 1/8
www.st.com 8 Absolute maximum ratings 1 D44H8, D44H11, D45H8, D45H11 Absolute maximum ratings
Table 2. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (IB = 0) D44H8 -D45H8 60 V Collector-emitter voltage (IB = 0) D44H11 -D45H11 80 V Emitter-base voltage (IC = 0) 5 V Collector current 10 A Collector peak current 20 A PTOT Total dissipation at Tcase = 25 °C 50 W TSTG Storage temperature -55 to 150 °C 150 °C Value Unit VCEO
VEBO
IC
ICM TJ Note: Max. operating junction temperature For PNP types voltage and current values are negative.
Table 3.
Symbol 2/8 Parameter Thermal data
Parameter RthJC Thermal resistance junction-case max 2.5 °C/W RthJA Thermal resistance junction-ambient max 62.5 °C/W Doc ID 4213 Rev 5 D44H8, D44H11, D45H8, D45H11 2 Electrical characteristics Electrical characteristics
Tcase = 25 °C; unless otherwise specified.
Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. 60
80 -Max. Unit Collector-emitter
sustaining voltage (IB = 0) IC = 100 mA
D44H8 -D45H8
D44H11 -D45H11 ICES Collector cut-off current …