Datasheet STMicroelectronics TIP147 — 数据表
| 制造商 | STMicroelectronics |
| 系列 | TIP147 |
| 零件号 | TIP147 |
互补硅功率达林顿晶体管
数据表
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
TIP140/141/142
TIP145/146/147 ® COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■ ■
■ ■ TIP141, TIP142, TIP145 AND TIP147 ARE
STMicroelectronics PREFERRED
SALESTYPES
COMPLEMENTARY PNP -NPN DEVICES
MONOLITHIC DARLINGTON
CONFIGURATION
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
3
2 APPLICATIONS
■ LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT 1 TO-218 DESCRIPTION
The TIP140, TIP141 and TIP142 are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration, mounted in
TO-218 plastic package. They are intented for
use in power linear and switching applications.
The complementary PNP types are TIP145,
TIP146 and TIP147 respectively. INTERNAL SCHEMATIC DIAGRAM R2 Typ. = 150 Ω R1 Typ. = 5 KΩ ABSOLUTE MAXIMUM RATINGS …
TIP142, TIP147
Complementary power Darlington transistors
Datasheet — production data Features
в– Monolithic Darlington configuration в– Integrated antiparallel collector-emitter diode Applications
2 в– Linear and switching industrial equipment
TO-247 Description
The devices are manufactured in planar
technology with “base island” layout and
monolithic Darlington configuration. The resulting
transistors show exceptional high gain
performance coupled with very low saturation
voltage. Table 1. 3 1 Figure 1. Internal schematic diagrams R1 typ. = 5 kО© R1 typ. = 8 kО© R2 typ. = 60 О© R2 typ. = 100 О© Device summary Part number Marking Polarity TIP142 TIP142 NPN TIP147 TIP147 PNP April 2012
This is information on a product in full production. Doc ID 4132 Rev 8 Package Packaging TO-247 Tube 1/10
www.st.com 10 Absolute maximum ratings 1 Absolute maximum ratings
Table 2. Absolute maximum ratings Symbol Value Unit Collector-base voltage (IE = 0) 100 V VCEO Collector-emitter voltage (IB = 0) 100 V VEBO Emitter-base voltage (IC = 0) 5 V Collector current 10 A Collector peak current 20 A Base current 0.5 A PTOT Total dissipation at Tcase = 25 В°C 125 W TSTG Storage temperature -65 to 150 В°C 150 В°C ICM
IB TJ Max. operating junction temperature For PNP type voltage and current are negative.
Table 3.
Symbol
RthJC 2/10 Parameter VCBO IC Note: TIP142, TIP147 Thermal data
Parameter
Thermal resistance junction-case Doc ID 4132 Rev 8 __max Value Unit 1 В°C/W TIP142, TIP147 2 Electrical characteristics Electrical characteristics
Tcase = 25 В°C; unless otherwise specified.
Table 4. …