Datasheet ESM2012DV - STMicroelectronics DARLINGTON TRANSISTOR, SOT-227 — 数据表

详细说明

Manufacturer: STMicroelectronics

Description: DARLINGTON TRANSISTOR, SOT-227

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Docket:
®
ESM2012DV
NPN DARLINGTON POWER MODULE
s s s
s s

Specifications:

• Av Current Ic: 120 A
• Collector Emitter Voltage V(br)ceo: 125 V
• Collector Emitter Voltage Vces: 1.5 V
• Continuous Collector Current Ic Max: 120 A
• Current Ib: 2 A
• Current Ic Continuous a Max: 120 A
• DC Collector Current: 120 A
• DC Current Gain Min: 1200
• DC Current Gain Typ: 1200
• DC Current Gain: 120 A
• External Depth: 38.2 mm
• External Length / Height: 12.2 mm
• External Width: 25.4 mm
• Mounting Type: Screw
• Number of Pins: 4
• Number of Transistors: 1
• Package / Case: ISOTOP
• Pin Configuration: b
• Power Dissipation Pd: 175 W
• Power Dissipation Ptot Max: 175 W
• Pulsed Current Icm: 128 A
• SVHC: No SVHC (15-Dec-2010)
• Transistor Case Style: ISOTOP
• Transistor Polarity: NPN
• Transistor Type: Darlington
• Voltage Vcbo: 150 V

RoHS: Yes

Accessories:

• SCHRODER - 20900