Datasheet DMN2112SN-7 - Diodes MOSFET, N CH, 20 V, 1.2 A, SC-59 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, N CH, 20 V, 1.2 A, SC-59

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Docket:
DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
· · · · · · Low On-Resistance Ideal for Notebook Computer, Portable Phone, PCMCIA Cards, and Battery Powered Circuits Lead Free By Design/RoHS Compliant (Note 2) Qualified to AEC-Q101 Standards for High Reliability ESD Protected Gate "Green" Device (Note 3)
Mechanical Data

Specifications:

• Continuous Drain Current Id: 1.2 A
• Current Id Max: 4 A
• Drain Source Voltage Vds: 20 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SC-59
• Power Dissipation: 500 mW
• Rds(on) Test Voltage Vgs: 4.5 V
• SVHC: No SVHC (20-Jun-2011)
• Threshold Voltage Vgs Typ: 1.2 V
• Transistor Case Style: SC-59
• Transistor Polarity: N Channel
• Transistor Type: Enhancement
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds on Measurement: 4.5 V

RoHS: Yes

其他名称:

DMN2112SN7, DMN2112SN 7