Datasheet ZVP2106G - Diodes MOSFET, P, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, P, SOT-223

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Docket:
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 MARCH 96 FEATURES * 60 Volt VDS * RDS(on)=5 PARTMARKING DETAIL: COMPLEMENTARY TYPE: ZVP2106 ZVN2106G
ZVP2106G
D
S D G

Simulation Model

Specifications:

• Continuous Drain Current Id: 450 mA
• Current Id Max: 450 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• On Resistance Rds(on): 5 Ohm
• Package / Case: SOT-223
• Power Dissipation Pd: 2 W
• Power Dissipation Ptot Max: 2 W
• Pulse Current Idm: 4 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: ZVP2106
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: -3.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: -3.5 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -3.5 V

RoHS: Yes