Datasheet ZVP3310F - Diodes MOSFET, P, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, P, SOT-23

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Docket:
SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 OCTOBER 1995 FEATURES * 100 Volt VDS * RDS(on)=20 COMPLEMENTARY TYPE PARTMARKING DETAIL 7
ZVP3310F
D S
ZVN3310F MR

Simulation Model

Specifications:

• Continuous Drain Current Id: 75 mA
• Current Id Max: 75 mA
• Current Temperature: 25°C
• Device Marking: ZVP3310F
• Drain Source Voltage Vds: 100 V
• External Depth: 2.5 mm
• External Length / Height: 1.12 mm
• External Width: 3.05 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 20 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 330 mW
• Power Dissipation Ptot Max: 330 mW
• Pulse Current Idm: 1.2 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: MR
• SVHC: No SVHC (15-Dec-2010)
• Tape Width: 8 mm
• Threshold Voltage Vgs Typ: -3.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -100 V
• Voltage Vgs Max: -3.5 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -3.5 V

RoHS: Yes

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