Datasheet ZXM61P03F - Diodes MOSFET, P, SOT-23 — 数据表

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Manufacturer: Diodes

Description: MOSFET, P, SOT-23

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Docket:
ZXM61P03F
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-30V; RDS(ON)=0.35 ; ID=-1.1A DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES

Simulation Model

Specifications:

• Continuous Drain Current Id: 1.1 A
• Current Id Max: 1.1 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 350 MOhm
• On State Resistance Max: 350 MOhm
• Package / Case: SOT-23
• Power Dissipation Pd: 625 W
• Power Dissipation Ptot Max: 625 W
• Pulse Current Idm: 4.3 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: P03
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -30 V
• Voltage Vgs Max: -1 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Min: -1 V

RoHS: Yes

Accessories:

• LICEFA - V11-7
• Roth Elektronik - RE901