Datasheet ZXM62P03E6 - Diodes MOSFET, P, SOT-23-6 — 数据表

Diodes ZXM62P03E6

Part Number: ZXM62P03E6

详细说明

Manufacturer: Diodes

Description: MOSFET, P, SOT-23-6

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Docket:
ZXM62P03E6
30V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS=-30V; RDS(ON)=0.15 DESCRIPTION
This new generation of high density MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.
ID=-2.6A

Specifications:

  • Continuous Drain Current Id: 2.6 A
  • Current Id Max: -1.5 A
  • Current Temperature: 25°C
  • Drain Source Voltage Vds: 30 V
  • Mounting Type: SMD
  • Number of Pins: 6
  • Number of Transistors: 1
  • On Resistance Rds(on): 110 MOhm
  • On State Resistance Max: 150 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: SOT-23
  • Power Dissipation Pd: 1.1 W
  • Pulse Current Idm: 18 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SMD Marking: 2P03
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: -1 V
  • Transistor Case Style: SOT-23
  • Transistor Polarity: P Channel
  • Voltage Vds Typ: -30 V
  • Voltage Vgs Max: -12 V
  • Voltage Vgs Rds on Measurement: -10 V
  • Voltage Vgs th Min: -1 V

RoHS: Yes