Datasheet ZXMN2B01F - Diodes MOSFET, N, SOT-23 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, N, SOT-23

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Docket:
ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability
Summary
V(BR)DSS RDS(on) ( ) 0.100 @ VGS= 4.5V 20 0.150 @ VGS= 2.5V 0.200 @ VGS= 1.8V ID (A) 2.4 2.0 1.7
Description
This new generation trench MOSFET from Zetex features low onresistance achievable with low gate drive.

Simulation Model

Specifications:

• Capacitance Ciss Typ: 370 pF
• Continuous Drain Current Id: 2.4 A
• Current Id Max: 2.4 A
• Drain Source Voltage Vds: 20 V
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• N-channel Gate Charge: 4.8nC
• Number of Pins: 3
• On Resistance Rds(on): 100 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-23
• Power Dissipation Pd: 625 mW
• Pulse Current Idm: 11.8 A
• Rds(on) Test Voltage Vgs: 4.5 V
• Reverse Recovery Time trr Typ: 6.7 ns
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-23
• Transistor Polarity: N Channel
• Turn Off Time: 17.8 ns
• Turn On Time: 2.2 ns
• Voltage Vds Typ: 20 V
• Voltage Vgs Max: 8 V
• Voltage Vgs Rds N Channel: 4.5 V
• Voltage Vgs Rds on Measurement: 4.5 V
• Voltage Vgs th Max: 1 V
• Voltage Vgs th Min: 0.4 V

RoHS: Yes