Datasheet ZXMP2120E5 - Diodes MOSFET, P, SOT23-5 — 数据表

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Manufacturer: Diodes

Description: MOSFET, P, SOT23-5

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Docket:
ZXMP2120E5
200V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY V(BR)DSS =-200V; RDS(ON) = 28 ; ID = -122mA DESCRIPTION This 200V enhancement mode P-channel MOSFET provides users with a competitive specification offering efficient power handling capability, high impedance and is free from thermal runaway and thermally induced secondary breakdown.

Applications benefiting from this device include a variety of Telecom and general high voltage circuits. A 4 pin SOT223 version is also available (ZXMP2120G4). FEATURES
SOT23-5
· High voltage · Low on-resistance · Fast switching speed · Low gate drive · Low threshold · SOT23-5 package variant engineered to increase spacing between

Specifications:

• Continuous Drain Current Id: 122 mA
• Drain Source Voltage Vds: 200 V
• Mounting Type: SMD
• Number of Pins: 5
• On Resistance Rds(on): 28 Ohm
• Package / Case: SOT-23
• Power Dissipation Pd: 750 mW
• Pulse Current Idm: 700 mA
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -3.5 V
• Transistor Case Style: SOT-23
• Transistor Polarity: P Channel
• Voltage Vds Typ: -200 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Min: -1.5 V

RoHS: Yes