Datasheet ZXMN6A25GTA - Diodes MOSFET, N, 60 V, SOT-223 — 数据表

详细说明

Manufacturer: Diodes

Description: MOSFET, N, 60 V, SOT-223

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Docket:
ZXMN6A25G 60V SOT223 N-channel enhancement mode MOSFET
Summary
V(BR)DSS 60 RDS(on) ( ) 0.050 @ VGS = 10V 0.070 @ VGS = 4.5V ID (A) 6.7 5.7
Description
This new generation trench MOSFET from Zetex features a unique structure combining the benefits of low on-resistance and fast switching, making it ideal for high efficiency power management applications.

Simulation Model

Specifications:

• Capacitance Ciss Typ: 1063 pF
• Continuous Drain Current Id: 6.7 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• On Resistance Rds(on): 0.05 Ohm
• Package / Case: SOT-223 (TO-261)
• Pin Configuration: 1(G), 2(D), 3(S), TAB(D)
• Power Dissipation Pd: 2 W
• Pulse Current Idm: 28.5 A
• SVHC: No SVHC (18-Jun-2010)
• Threshold Voltage Vgs Typ: 1 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N
• Transistor Type: Enhancement
• Voltage Vds Typ: 60 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Min: 1 V

RoHS: Yes