Datasheet FDA59N30 - Fairchild MOSFET, N, TO-3P — 数据表

Fairchild FDA59N30

Part Number: FDA59N30

详细说明

Manufacturer: Fairchild

Description: MOSFET, N, TO-3P

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Docket:
FDA59N30 300V N-Channel MOSFET
UniFET
FDA59N30
300V N-Channel MOSFET Features
· 59A, 300V, RDS(on) = 0.056 @VGS = 10 V · Low gate charge ( typical 77 nC) · Low Crss ( typical 80 pF) · Fast switching · 100% avalanche tested · Improved dv/dt capability

Specifications:

  • Continuous Drain Current Id: 59 A
  • Current Id Max: 59 A
  • Drain Source Voltage Vds: 300 V
  • Mounting Type: Through Hole
  • Number of Pins: 3
  • On Resistance Rds(on): 56 MOhm
  • Operating Temperature Range: -55°C to +150°C
  • Package / Case: TO-3P
  • Power Dissipation Pd: 500 W
  • Pulse Current Idm: 236 A
  • Rds(on) Test Voltage Vgs: 10 V
  • SVHC: No SVHC (15-Dec-2010)
  • Threshold Voltage Vgs Typ: 5 V
  • Transistor Case Style: TO-3P
  • Transistor Polarity: N Channel
  • Voltage Vds Typ: 300 V
  • Voltage Vgs Max: 30 V
  • Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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