Datasheet FDC653N - Fairchild MOSFET, N, SMD, SUPERSOT-6 — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, N, SMD, SUPERSOT-6

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Docket:
November 1997
FDC653N N-Channel Enhancement Mode Field Effect Transistor
General Description
This N-Channel enhancement mode power field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features

Specifications:

• Continuous Drain Current Id: 5 A
• Current Id Max: 5 A
• Drain Source Voltage Vds: 30 V
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 35 MOhm
• Package / Case: SuperSOT-6
• Power Dissipation: 1.6 W
• Rds(on) Test Voltage Vgs: 10 V
• SVHC: No SVHC (19-Dec-2011)
• Threshold Voltage Vgs Typ: 1.7 V
• Transistor Case Style: SuperSOT
• Transistor Polarity: N Channel
• Voltage Vds Typ: 30 V
• Voltage Vgs Max: 1.7 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes