Datasheet FDC658P - Fairchild MOSFET, P, SUPERSOT-6 — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, P, SUPERSOT-6

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Docket:
February 1999
FDC658P Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Features

Specifications:

• Continuous Drain Current Id: 4 A
• Current Id Max: -4 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 30 V
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 6
• On Resistance Rds(on): 50 MOhm
• Package / Case: SuperSOT-6
• Power Dissipation Pd: 1.6 W
• Pulse Current Idm: 20 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: FDC658P
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: -1.7 V
• Transistor Case Style: SuperSOT
• Transistor Polarity: P Channel
• Uni / Bi Directional Polarity: P
• Voltage Vds Typ: 30 V
• Voltage Vds: 30 V
• Voltage Vgs Max: -1.7 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -3 V

RoHS: Yes

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