FDN304P
P-Channel 1.8V Specified PowerTrench MOSFET
General Description Features This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications. • –2.4 A, –20 V. Applications • Fast switching speed • Battery management • High performance trench technology for extremely
low RDS(ON) • Load switch
• Battery protection RDS(ON) = 52 mΩ @ VGS = –4.5 V
RDS(ON) = 70 mΩ @ VGS = –2.5 V
RDS(ON) = 100 mΩ @ VGS = –1.8 V • SuperSOTTM -3 provides low RDS(ON) and 30% higher
power handling capability than SOT23 in the same
footprint D D S
S G
TM SuperSOT -3 G Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter –20 V VGSS Gate-Source Voltage ±8 V ID Drain Current –2.4 A – Continuous (Note 1a) – Pulsed
PD –10 Maximum Power Dissipation TJ, TSTG (Note 1a) 0.5 (Note 1b) 0.46 W –55 to +150 °C (Note 1a) 250 °C/W (Note 1) 75 °C/W Operating and Storage Junction Temperature Range Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case Package Marking and Ordering Information
Device Marking
304P 2001 Fairchild Semiconductor Corporation Device Reel Size Tape width Quantity FDN304P 7’’ 8mm 3000 units FDN304P Rev C(W) FDN304P January 2001 Electrical Characteristics
Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units –13 mV/°C Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA ∆BVDSS
∆TJ
IDSS Breakdown Voltage Temperature …