March 1998 FDN337N
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features TM SuperSOT -3 N-Channel logic level enhancement mode
power field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited for
low voltage applications in notebook computers, portable
phones, PCMCIA cards, and other battery powered circuits
where fast switching, and low in-line power loss are needed
in a very small outline surface mount package. SuperSOTTM-8 SuperSOTTM-6 SOT-23 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V
RDS(ON) = 0.082 Ω @ VGS = 2.5 V.
Industry standard outline SOT-23 surface mount
package using proprietary SuperSOTTM-3 design for
superior thermal and electrical capabilities.
High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current
capability. SO-8 SOIC-16 SOT-223 D D 3 37
S TM SuperSOT -3 G Absolute Maximum Ratings
Symbol Parameter VDSS Drain-Source Voltage VGSS
ID
PD Maximum Power Dissipation TA = 25oC unless other wise noted
FDN337N Units 30 V Gate-Source Voltage -Continuous ±8 V Drain/Output Current -Continuous 2.2 A -Pulsed TJ,TSTG S G 10 …
