Datasheet Fairchild NDS0610 — 数据表

NDS0610 NDS0610
P-Channel Enhancement Mode Field Effect Transistor
General Description Features These P-Channel enhancement mode field effect
transistors are produced using ON Semiconductor's
proprietary, high cell density, DMOS technology. This
very high density process has been designed to
minimize on-state resistance, provide rugged
and reliable performance and fast switching. They
can be used, with a minimum of effort, in most
applications requiring up to 120mA DC and can deliver
current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch. • −0.12A, −60V. RDS(ON) = 10 Ω @ VGS = −10 V
RDS(ON) = 20 Ω @ VGS = −4.5 V • Voltage controlled p-channel small signal switch
• High density cell design for low RDS(ON) • High saturation current D D S
G SOT-23 S G Absolute Maximum Ratings
Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage Parameter −60 V VGSS Gate-Source Voltage ±20 V ID Drain Current −0.12 A – Continuous (Note 1) −1 – Pulsed
Maximum Power Dissipation PD (Note 1) Derate Above 25°C
TJ, TSTG Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds TL 0.36
2.9 W
mW/°C −55 to +150 °C 300 °C 350 °C/W Thermal Characteristics …