Datasheet NDT014 - Fairchild MOSFET, N SOT-223 — 数据表

详细说明

Manufacturer: Fairchild

Description: MOSFET, N SOT-223

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Docket:
September 1996
NDT014 N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features

Specifications:

• Continuous Drain Current Id: 2.7 A
• Current Id Max: 2.7 A
• Drain Source Voltage Vds: 60 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 180 MOhm
• Operating Temperature Range: -65°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Pd: 3 W
• Pulse Current Idm: 10 A
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: 014
• SVHC: No SVHC (15-Dec-2010)
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Y-Ex

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