Datasheet BSP125 - Infineon MOSFET, N, SOT-223 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N, SOT-223

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Docket:
Rev.

1.11
BSP125
SIPMOS® Power-Transistor
Feature · N-Channel · Enhancement mode · Logic Level · dv/dt rated
Product Summary VDS RDS(on) ID 600 45 0.12

Specifications:

• Continuous Drain Current Id: 120 mA
• Current Id Max: 120 mA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 600 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Junction Temperature Tj Min: -55°C
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• On Resistance Rds(on): 45 Ohm
• Package / Case: SOT-223
• Power Dissipation Pd: 1.7 W
• Power Dissipation Ptot Max: 1.7 W
• Pulse Current Idm: 480 mA
• Rds(on) Test Voltage Vgs: 10 V
• SMD Marking: BSP125
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 1.9 V
• Transistor Case Style: SOT-223
• Transistor Polarity: N Channel
• Voltage Vds Typ: 600 V
• Voltage Vgs Max: 1.9 V
• Voltage Vgs Rds on Measurement: 10 V
• Voltage Vgs th Max: 2.5 V

RoHS: Yes

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