Datasheet BSP171PL6327 - Infineon MOSFET, P, REEL 1K — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, P, REEL 1K

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Docket:
BSP171P
SIPMOS® Small-Signal-Transistor
Features · P-Channel · Enhancement mode · Logic level · Avalanche rated · dv /dt rated · Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max ID -60 0.3 -1.9 V A
PG-SOT-223

Specifications:

• Avalanche Single Pulse Energy Eas: 70mJ
• Continuous Drain Current Id: 1.45 A
• Current Id Max: -1.9 A
• Current Idss Max: 1 µA
• Current Idss Typ: 0.00001 µA
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Mounting Type: SMD
• Number of Pins: 3
• Number of Transistors: 1
• On Resistance Rds(on): 450 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: SOT-223
• Power Dissipation Max: 1.8 W
• Power Dissipation: 1.8 W
• Pulse Current Idm: 5.8 A
• Rate of Voltage Change dv / dt: 6kV/µs
• Rds(on) Test Voltage Vgs: -10 V
• Reel Quantity: 1000
• SMD Marking: BSP171P
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: 1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -2 V
• Voltage Vgs th Min: -1 V

RoHS: Yes