Datasheet BSP315P - Infineon MOSFET, P, LOGIC, SOT-223 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, P, LOGIC, SOT-223

Download Data Sheet

Docket:
BSP 315 P SIPMOS ® Small-Signal-Transistor
Features · P-Channel
·
Product Summary Drain source voltage Continuous drain current
VDS ID

Specifications:

• Continuous Drain Current Id: 1.17 A
• Current Id Max: 1.17 A
• Current Temperature: 25°C
• Drain Source Voltage Vds: 60 V
• External Depth: 7.3 mm
• External Length / Height: 1.7 mm
• External Width: 6.7 mm
• Full Power Rating Temperature: 25°C
• Junction Temperature Tj Max: 150°C
• Mounting Type: SMD
• Number of Pins: 4
• Number of Transistors: 1
• On Resistance Rds(on): 800 MOhm
• Package / Case: SOT-223
• Power Dissipation Pd: 1.8 W
• Power Dissipation Ptot Max: 1.8 W
• Pulse Current Idm: 4.68 A
• Rds(on) Test Voltage Vgs: -10 V
• SMD Marking: BSP315P
• Tape Width: 12 mm
• Threshold Voltage Vgs Typ: -1.5 V
• Transistor Case Style: SOT-223
• Transistor Polarity: P Channel
• Voltage Vds Typ: -60 V
• Voltage Vgs Max: -1.5 V
• Voltage Vgs Rds on Measurement: -10 V
• Voltage Vgs th Max: -2 V

RoHS: Yes