Datasheet IPB60R199CP - Infineon MOSFET, N, TO-263 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N, TO-263

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Docket:
IPB60R199CP
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ONxQg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant
Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V
0.199 33 nC

Specifications:

• Continuous Drain Current Id: 16 A
• Current Id Max: 16 A
• Drain Source Voltage Vds: 650 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 199 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-263
• Power Dissipation: 139 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 650 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V
• RoHS: Yes
• SVHC: No SVHC (19-Dec-2011)