Datasheet IPI50R350CP - Infineon MOSFET, N, TO-262 — 数据表
Part Number: IPI50R350CP
详细说明
Manufacturer: Infineon
Description: MOSFET, N, TO-262
Docket:
IPI50R350CP
CoolMOSTM Power Transistor
Features · Lowest figure of merit RON x Qg · Ultra low gate charge · Extreme dv/dt rated · High peak current capability · Pb-free lead plating; RoHS compliant · Quailfied according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max Q g,typ 550 0.350 19 V nC
PG-TO262
Specifications:
- Continuous Drain Current Id: 10 A
- Current Id Max: 10 A
- Drain Source Voltage Vds: 550 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On Resistance Rds(on): 350 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-262
- Power Dissipation Pd: 89 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-262
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 550 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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