Datasheet IPI90R1K0C3 - Infineon MOSFET, N, TO-262 — 数据表

Infineon IPI90R1K0C3

Part Number: IPI90R1K0C3

详细说明

Manufacturer: Infineon

Description: MOSFET, N, TO-262

Docket:
IPI90R1K0C3
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ON x Qg · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @ T J= 25°C Q g,typ 900 1.0 34 V nC
PG-TO262

Specifications:

Continuous Drain Current Id: 5.7 A
Current Id Max: 5.7 A
Drain Source Voltage Vds: 900 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 1 Ohm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-262
Power Dissipation Pd: 89 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 3 V
Transistor Case Style: TO-262
Transistor Polarity: N Channel
Transistor Type: Power MOSFET
Voltage Vds Typ: 900 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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