Datasheet IPI90R340C3 - Infineon MOSFET, N, TO-262 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N, TO-262

Download Data Sheet

Docket:
IPI90R340C3
CoolMOSTM Power Transistor
Features · Lowest figure-of-merit R ON x Qg · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Worldwide best R DS,on in TO262 (I2Pak) · Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 0.34 94 V nC
PG-TO262

Specifications:

• Continuous Drain Current Id: 15 A
• Current Id Max: 15 A
• Drain Source Voltage Vds: 900 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 340 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-262
• Power Dissipation Pd: 208 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-262
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 900 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

Accessories:

• Panasonic - EYGA091203SM
• Panasonic - EYGA121807A