Datasheet SPA07N60CFD - Infineon MOSFET, N, TO-220 — 数据表

详细说明

Manufacturer: Infineon

Description: MOSFET, N, TO-220

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Docket:
SPA07N60CFD
CoolMOSTM Power Transistor
Features · Intrinsic fast-recovery body diode · Extremely low reverse recovery charge · Ultra low gate charge · Extreme dv /dt rated · High peak current capability · Qualified according to JEDEC1) for target applications
Product Summary V DS @Tjmax R DS(on),max ID 650 0.7 6.6 V A
PG-TO220 FP

Specifications:

• Continuous Drain Current Id: 6.6 A
• Current Id Max: 6.6 A
• Drain Source Voltage Vds: 650 V
• Mounting Type: Through Hole
• Number of Pins: 3
• On Resistance Rds(on): 700 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-220
• Power Dissipation Pd: 32 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 4 V
• Transistor Case Style: TO-220
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 650 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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