Datasheet SPA11N60C3 - Infineon MOSFET, N, 600 V, TO-220F — 数据表
Part Number: SPA11N60C3
详细说明
Manufacturer: Infineon
Description: MOSFET, N, 600 V, TO-220F
Docket:
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Improved transconductance
P-TO220-3-31
1 2 3
VDS @ Tjmax RDS(on) ID
Specifications:
- Continuous Drain Current Id: 11 A
- Current Id Max: 11 A
- Drain Source Voltage Vds: 650 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On Resistance Rds(on): 380 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-220F
- Power Dissipation Pd: 33 W
- Pulse Current Idm: 33 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: TO-220F
- Transistor Polarity: N Channel
- Voltage Vds Typ: 650 V
- Voltage Vds: 650 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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