Datasheet SPA20N60CFD - Infineon MOSFET, N, 600 V, TO-220F — 数据表
Part Number: SPA20N60CFD
详细说明
Manufacturer: Infineon
Description: MOSFET, N, 600 V, TO-220F
Docket:
SPA20N60CFD
CoolMOSTM Power Transistor
Features · New revolutionary high voltage technology · Intrinsic fast-recovery body diode · Extremely low reverse recovery charge · Ultra low gate charge · Extreme dv /dt rated · High peak current capability · Periodic avalanche rated · Qualified according to JEDEC0) for target applications · Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max I D1) 600 0.22 20.7 V A
PG-TO220-3-31
Specifications:
- Continuous Drain Current Id: 20.7 A
- Current Id Max: 20.7 A
- Drain Source Voltage Vds: 600 V
- Mounting Type: Through Hole
- Number of Pins: 3
- On Resistance Rds(on): 220 MOhm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: TO-220F
- Power Dissipation Pd: 35 W
- Pulse Current Idm: 52 A
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 4 V
- Transistor Case Style: TO-220F
- Transistor Polarity: N Channel
- Voltage Vds Typ: 600 V
- Voltage Vds: 600 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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