Datasheet SPB17N80C3 - Infineon MOSFET, N, TO-263 — 数据表

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Manufacturer: Infineon

Description: MOSFET, N, TO-263

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Docket:
SPB17N80C3
CoolMOS® Power Transistor
Features · new revolutionary high voltage technology · Extreme dv/dt rated · High peak current capability · Qualified according to JEDEC1) for target applications · Pb-free lead plating; RoHS compliant · Ultra low gate charge · Ultra low effective capacitances
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ 800 0.29 91 V nC
PG-TO263

Specifications:

• Continuous Drain Current Id: 17 A
• Current Id Max: 17 A
• Drain Source Voltage Vds: 800 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 290 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-263
• Power Dissipation Pd: 227 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 800 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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