Datasheet SPI20N60CFD - Infineon MOSFET, N, TO-262 — 数据表

Infineon SPI20N60CFD

Part Number: SPI20N60CFD

详细说明

Manufacturer: Infineon

Description: MOSFET, N, TO-262

Docket:
SPI20N60CFD Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Worldwide best RDS(on) in TO 220 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · High peak current capability · Intrinsic fast-recovery body diode · Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 0.22 20.7
PG-TO262
V A
Type SPI20N60CFD Maximum Ratings Parameter

Specifications:

Continuous Drain Current Id: 20.7 A
Current Id Max: 20.7 A
Drain Source Voltage Vds: 650 V
Mounting Type: Through Hole
Number of Pins: 3
On Resistance Rds(on): 220 MOhm
Operating Temperature Range: -55°C to +150°C
Package / Case: TO-262
Power Dissipation Pd: 208 W
Rds(on) Test Voltage Vgs: 10 V
Threshold Voltage Vgs Typ: 4 V
Transistor Case Style: TO-262
Transistor Polarity: N Channel
Transistor Type: Power MOSFET
Voltage Vds Typ: 650 V
Voltage Vgs Max: 20 V
Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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