Datasheet SPB12N50C3 - Infineon MOSFET, N, TO-263 — 数据表

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Manufacturer: Infineon

Description: MOSFET, N, TO-263

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Docket:
SPB12N50C3 Cool MOSTM Power Transistor
Feature · New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Ultra low effective capacitances · Improved transconductance
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VDS @ Tjmax RDS(on) ID
560 0.38 11.6

Specifications:

• Continuous Drain Current Id: 11.6 A
• Current Id Max: 11.6 A
• Drain Source Voltage Vds: 560 V
• Mounting Type: SMD
• Number of Pins: 3
• On Resistance Rds(on): 380 MOhm
• Operating Temperature Range: -55°C to +150°C
• Package / Case: TO-263
• Power Dissipation Pd: 125 W
• Rds(on) Test Voltage Vgs: 10 V
• Threshold Voltage Vgs Typ: 3 V
• Transistor Case Style: TO-263
• Transistor Polarity: N Channel
• Transistor Type: Power MOSFET
• Voltage Vds Typ: 560 V
• Voltage Vgs Max: 20 V
• Voltage Vgs Rds on Measurement: 10 V

RoHS: Yes

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