Datasheet SPN02N60C3 - Infineon MOSFET, N, SOT-223 — 数据表
Part Number: SPN02N60C3
详细说明
Manufacturer: Infineon
Description: MOSFET, N, SOT-223
Docket:
SPN02N60C3
CoolMOSTM Power Transistor
Features · New revolutionary high voltage technology · Ultra low gate charge · Ultra low effective capacitances · Extreme dv /dt rated
Product Summary V DS @ T j,max R DS(on),max ID 650 2.5 0.4 V A
SOT223
Specifications:
- Continuous Drain Current Id: 400 mA
- Current Id Max: 400 mA
- Drain Source Voltage Vds: 650 V
- Mounting Type: SMD
- On Resistance Rds(on): 2.5 Ohm
- Operating Temperature Range: -55°C to +150°C
- Package / Case: SOT-223
- Power Dissipation Pd: 1.8 W
- Rds(on) Test Voltage Vgs: 10 V
- Threshold Voltage Vgs Typ: 3 V
- Transistor Case Style: SOT-223
- Transistor Polarity: N Channel
- Transistor Type: Power MOSFET
- Voltage Vds Typ: 650 V
- Voltage Vgs Max: 20 V
- Voltage Vgs Rds on Measurement: 10 V
RoHS: Yes
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